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| e PTB 20189 1 Watt, 900-960 MHz Cellular Radio RF Power Transistor Description The 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 25 Volt, 900-960 MHz Characteristics - Output Power = 1 Watt - Gain = 12 dB Min at 1 Watt Class A/AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power and Efficiency vs. Input Power 2.0 80 VCC = 25 V 1.5 Output Power (Watts) ICQ = 175 mA f = 960 MHz 60 1.0 40 Efficiency (%) 201 89 LO TC OD E 0.5 20 0.0 0.00 0.02 0.04 0.06 0.08 0 0.10 Input Power (Watts) Package 20227 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 0.5 11 0.063 -40 to +150 16.0 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20189 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 5 mA VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1.5 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 28 55 3.5 20 Typ 32 70 5 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 1 W, ICQ = 175 mA, f = 960 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 1 W, ICQ = 175 mA, f = 960 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 1 W, ICQ = 175 mA, f = 960 MHz--all phase angles at frequency of test) Symbol Gpe C Min 12 -- -- Typ 14 25 -- Max -- -- 10:1 Units dB % -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 1 W, ICQ = 175 mA) Z Source Z Load Frequency MHz 900 930 960 R 3.0 3.0 2.9 Z Source jX -0.4 0.0 0.5 R 9.0 9.0 9.2 Z Load jX 6.0 7.5 8.9 2 e Typical Performance Output Power vs. Supply Voltage 1.3 PTB 20189 Gain vs. Frequency 16 (as measured in a broadband circuit) Output Power (Watts) 1.1 ICQ = 175 mA Pin = 40 mW f = 960 MHz Gain (dB) 14 0.9 12 VCC = 25 V 10 0.7 ICQ = 175 mA Pout = 1 W 915 930 945 960 0.5 16 18 20 22 24 26 28 30 8 900 Vcc, Supply Voltage Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20189 Uen Rev. C 09-28-98 3 |
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